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| 型號(hào) | 描述 | 數(shù)據(jù)手冊(cè) | 參考價(jià)格 |
|---|---|---|---|
| NE650103M-A | MESFET GAAS 2.7GHZ 3M |
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| NE6500379A-T1 | NE6500379A-T1 - 3W, L/S-BAND MEDIUM POWER GaAs MESFET - California Eastern Labs |
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| NE6500379A | NE6500379A - 3W, L/S-BAND MEDIUM POWER GaAs MESFET - California Eastern Labs |
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| NE5520279A-T1-A | NE5520279A-T1-A - 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET - California Eastern Labs |
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| NE5520279A | NE5520279A - 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET - California Eastern Labs |
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| NE5511279A | NE5511279A - 7.5 V UHF BAND RF POWER SILICON LD-MOS FET - California Eastern Labs |
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| NE5510279A-T1 | NE5510279A-T1 - 3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS - California Eastern Labs |
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| NE5510279A | NE5510279A - 3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS - California Eastern Labs |
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| NE5510179A-T1 | NE5510179A-T1 - 3.5 V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS - California Eastern Labs |
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| NE5510179A | NE5510179A - 3.5 V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS - California Eastern Labs |
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| NE5500179A-T1 | NE5500179A-T1 - 4.8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND GSM1900 TRANSMISSION AMPLIFIERS - California Eastern Labs |
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| NE5500179A | NE5500179A - 4.8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND GSM1900 TRANSMISSION AMPLIFIERS - California Eastern Labs |
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| NE46134-T1-AZ | RF TRANSISTOR NPN SOT-89 |
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| NE46134 | NE46134 - NECs NPN MEDIUM POWER MICROWAVE TRANSISTOR - California Eastern Labs |
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| NE46100 | NE46100 - NECs NPN MEDIUM POWER MICROWAVE TRANSISTOR - California Eastern Labs |
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| NE4210S01-T1B | HJ-FET 13DB S01 |
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| NE4210S01-T1 | NE4210S01-T1 - SUPER LOW NOISE HJ FET - California Eastern Labs |
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| NE4210S01 | HJ-FET 13DB S01 |
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| NE3514S02-T1D | NE3514S02-T1D - K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET - California Eastern Labs |
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| NE3514S02-T1C | NE3514S02-T1C - K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET - California Eastern Labs |
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| NE3514S02 | NE3514S02 - K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET - California Eastern Labs |
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| NE3512S02-T1D-A | NE3512S02-T1D-A - HETERO JUNCTION FIELD EFFECT TRANSISTOR - California Eastern Labs |
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| NE3512S02-T1D | NE3512S02-T1D - HETERO JUNCTION FIELD EFFECT TRANSISTOR - California Eastern Labs |
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| NE3512S02-T1C-A | HJ-FET NCH 13.5DB S02 |
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| NE3512S02-T1C | NE3512S02-T1C - HETERO JUNCTION FIELD EFFECT TRANSISTOR - California Eastern Labs |
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| NE3512S02 | NE3512S02 - HETERO JUNCTION FIELD EFFECT TRANSISTOR - California Eastern Labs |
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| NE3511S02-T1D-A | NE3511S02-T1D-A - X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET - California Eastern Labs |
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| NE3511S02-T1C-A | RF Mosfet HFET 2V 10mA 12GHz 13.5dB S02 |
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| NE3511S02-T1C | NE3511S02-T1C - X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET - California Eastern Labs |
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| NE3511S02 | NE3511S02 - X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET - California Eastern Labs |
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