眾所周知，GaN 功率器件具有傳統功率器件無可比擬的性能優勢，如大幅提升的開關速度和顯著降低的開關損耗，從而提供更優的整體效率，這使得GaN器件在高頻、高效率的應用中展現出明顯優勢。我們的應用指導將幫助客戶更好地使用云鎵的 GaN 器件，更大限度去挖掘云鎵的 GaN 器件的能力。本次發布云鎵應用手冊第三彈: GaN FET loss calculation (Boost converter)。此外，客戶可以通過云鎵半導體官方網站或者微信公眾號了解到更多云鎵 GaN 產品資訊和相關技術文檔。

Part 1: Basic information

01

Zero Qrr enables GaN to work in CCM TP-PFC?

In each half cycle of the AC input, the TP-PFC can be analyzed as a synchronous boost converter.

02

Synchronous CCM boost converter – waveforms

Part 2: Detailed analysis

01

Loss breakdown of a boost

02

Loss breakdown of GaN FETs: SW conduction loss

03

Loss breakdown of GaN FETs: SW+SR Coss loss

CloudSemi GaN has a superior Qosscomparing to other GaN vendors.

04

Loss breakdown of GaN FETs: SW I-V overlap loss

05

Switching time - tir

06

Switching time - tvf

07

Switching time – tvr & tif

08

Loss breakdown of GaN FETs: SR conduction loss

09

Loss breakdown of GaN FETs: SR deadtime loss

Part 3 : Summary

01

Summary

圖騰柱 PFC 效率計算可以參考 Boost 損耗計算方式，在此不再贅述。