寬禁帶（WBG）解決方案將能效提升到了新高度。憑借其更高的功率密度和更小的封裝尺寸，它們是實現可持續設計的關鍵。英飛凌的WBG產品組合表現如何？能為開發者帶來哪些益處？

英飛凌全球寬禁帶開發者論壇，2025年3月11日北京時間下午4點，全天直播即將開啟！

01

英飛凌科技零碳工業功率事業部總裁Peter Wawer博士和電源與傳感器系統事業部總裁Adam White發表主題演講，深入分享市場發展趨勢和英飛凌的寬禁帶（WBG）戰略。

02

包含英飛凌全系列的寬禁帶（WBG）功率半導體產品，包括分立器件、模塊以及高集成度解決方案，其中GaN產品涵蓋40V至700V，SiC產品涵蓋400V至3.3kV，釋放SiC和GaN的全部潛力，提供極致的設計靈活性。

03

涵蓋碳化硅（SiC）和氮化鎵（GaN）的全面技術分享，深入探討是什么讓CoolSiC和CoolGaN成為太陽能、儲能、逆變器設計以及車載電動汽車充電等應用的理想解決方案。您將看到許多不同的應用如何利用SiC和GaN的優勢。

●Top-Side Cooling (TSC) solutions for industrial andrenewable applications with SiC MOSFET

Qurat Akbar

Staff Product Application Engineer for Discrete SiC MOSFETs & diodes

●SiC 2.3 kV power modules asenabler towards a clean energy transition –

examples for wind and energy storagesystems

Dr. Marcel Morisse

Principal Engineer High Power Modules

●Keep on driving with WBG innovation for traction inverters

Mark Münzer

Fellow Motor Control Solutions

04

特邀客戶分享項目經驗以及應用體驗：

●SiC in Siemens ET200SP e-Starter3RD1

Thomas List

Siemens AG

Product owner

●Advanced multi-variant fusion concept for enhanced traction inverterintelligence, cost effectiveness and practicality

Allen Liu

Suzhou Inovance Automotive Co.,ltd.

Director, Chief Engineer

Hardware Pre-research and Platform R&D Center

報名后，您將收到一封確認電子郵件，內含當天直播觀看鏈接。

議程一覽（北京時間）：

16:00 – 16:05

Welcome and introduction

Dr. Peter Friedrichs, Fellow
Eva Gabriel, Director Product Marketing SiC

16:05 – 16:30

Opening Keynote – Expanding ourleadership in power systems through Wide Bandgap

Dr. Peter Wawer

Division President Green Industrial Power

Adam White

Division President Power & Sensor Systems

16:30– 17:00

SiC in Siemens ET200SP e-Starter3RD1

Thomas List

Siemens AG

Product owner

17:00 – 17:30

Advanced multi-variant fusion concept for enhanced traction inverterintelligence, cost effectiveness and practicality

Allen Liu

Suzhou Inovance Automotive Co.,ltd.

Director, Chief Engineer

Hardware Pre-research and Platform R&D Center

17:30 – 18:00

Top-Side Cooling (TSC) solutions for industrial andrenewable applications with SiC MOSFET

Qurat Akbar

Staff Product Application Engineer for Discrete SiC MOSFETs & diodes

18:00 – 18:30

SiC 2.3 kV power modules asenabler towards a clean energy transition –

examples for wind and energy storagesystems

Dr. Marcel Morisse

Principal Engineer High Power Modules

18:30 – 19:00

SiC .XT interconnect: enabling SiC for long lifetime in high power applications

Dr. Torsten Methfessel

Principal Engineer Quality & Reliability

19:00 – 19:30

Challenges and solutions to power latest AI processorgenerations for hyperscale data centers

Dr. Matthias Kasper

Lead Principal Engineer at System Innovations Lab

19:30 – 20:00

Dinner break (Beijing time)

20:00 – 20:30

Why GaN in Photovoltatics?

Richard Brace

BRC Solar, Head of Innovation and Research

20:30 – 21:00

Driving the future of Motor Control with 650V GaN

Ariza Javier

Principal System Application Engineer power conversion

21:00 – 21:30

Highly integrated coin-sized 1 kW GaN-basedmotor drive

Dr. Edward A. Jones

Principal Engineer in GaNApplication Development

Dr. Maurizio Incurvati

LeadPrincipal Engineer System Architect for Innovation in Motor Drives

21:30 – 22:00

GaN Monolithic Bi-directional Switch - A New Paradigm in Power Electronics

Dr. Kennith K. Leong

Lead Principal, Product Definition and Concept Engineer for CoolGaN HV BDS

22:00 – 22:15

15 Min. Coffee break

22:15 – 22:45

Value Proposition of GaN in OBC

Lucas Lu

Senior Director Technical Marketing GaN Auto

22:45 – 23:15

Keep on driving with WBG innovation for traction inverters

Mark Münzer

Fellow Motor Control Solutions

23:15 – 23:45

Automotive & Industrial MCUs for Software-controlledhigh Density Power Conversion’

Dr. Jürgen Stahl

Principal System Engineering

Klaus Scheibert

Senior Principal PT&xEV

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