The CY62167EV18 is a high performance CMOS static RAM organized as 1M words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life? （MoBL?） in portable applications such as cellular telephones. The device also has an automatic power down feature that reduces power consumption by 99 percent when addresses are not toggling. Place the device into standby mode when deselected （CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH）。 The input and output pins （I/O0 through I/O15） are placed in a high impedance state when： the device is deselected （CE1HIGH or CE2 LOW）; outputs are disabled （OE HIGH）; both Byte High Enable and Byte Low Enable are disabled （BHE， BLE HIGH）; and a write operation is in progress （CE1 LOW， CE2 HIGH and WE LOW）。 To write to the device， take Chip Enables （CE1 LOW and CE2 HIGH） and Write Enable （WE） input LOW. If Byte Low Enable （BLE） is LOW， then data from I/O pins （I/O0 through I/O7） is written into the location specified on the address pins （A0 through A19）。 If Byte High Enable （BHE） is LOW， then data from I/O pins （I/O8 through I/O15） is written into the location specified on the address pins （A0 through A19）。 To read from the device， take Chip Enables （CE1 LOW and CE2 HIGH） and Output Enable （OE） LOW while forcing the Write Enable （WE） HIGH. If Byte Low Enable （BLE） is LOW， then data from the memory location specified by the address pins appears on I/O0 to I/O7. If Byte High Enable （BHE） is LOW， then data from memory appears on I/O8 to I/O15. See the Truth Table on page 11 for a complete description of read and write modes. For a complete list of related documentation， click here