采用硅隔離So I (Silicon on Insulator) 技術,應用高能氧離子的注入方法,在單晶硅材料中形
成埋層二氧化硅,用以隔離作為測量電路的頂部硅層與體硅之間因溫度升高而造成的漏電流. 采用梁膜結合的壓力傳遞機構,將被測壓力與So I 敏感元件隔離開來,因此避免了被測壓力的瞬時高溫沖擊. 給出了傳感器的結構模型和實驗數據,測試結果表明,這種新型結構的耐高壓力傳感器,具有較好的動靜態特性.
關鍵詞: 硅隔離;壓力傳遞機構;耐高溫
Abstract: The silicon on insulator ( So I) technology with seperation by implantation of oxygen (SIMOX) is adopted to develop silicon dioxide buriedy layer in the silicon material. The layer effectively isolates the leak current caused by the high temperaturre between the top silicon layer detecting circuit and body silicon. A combined girder2film pressure t ransferred st ructure is used to isolate the measured pressure and the So I sensitive element , so the instantaneous high temperature (1000 ℃) impact can be avoided. The st ructure model of the t ransducer and the test data are provided in detail. The test result s show that this new type of high temperature resisting pressure t ransducer possesses fine static and dynamic characteristics.
Keywords : silicon on insulator ; pressure t ransf erred st ruct ure ; high temperat ure resisting