Abstract—An accurate analytical model is proposed in this paper
to calculate the power loss of a metal-oxide semiconductor field-effect
transistor. The nonlinearity of the capacitors of the devices and
the parasitic inductance in the circuit, such as the source inductor
shared by the power stage and driver loop, the drain inductor, etc.,
are considered in the model. In addition, the ringing is always observed
in the switching power supply, which is ignored in the traditional
loss model. In this paper, the ringing loss is analyzed in
a simple way with a clear physical meaning. Based on this model,
the circuit power loss could be accurately predicted. Experimental
results are provided to verify the model. The simulation results
match the experimental results very well, even at 2-MHz switching
frequency.
Index Terms—Finite element analysis (FEA), metal-oxide semiconductor
field-effect transistor (MOSFET).