The FM24C64 is a 64-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or FRAM is
nonvolatile and performs reads and writes like a
RAM. It provides reliable data retention for 45 years
while eliminating the complexities, overhead, and
system level reliability problems caused by
EEPROM and other nonvolatile memories.
The FM24C64 performs write operations at bus
speed. No write delays are incurred. Data is written to
the memory array in the cycle after it has been
successfully transferred to the device. The next bus
cycle may commence immediately. The FM24C64 is
capable of supporting 1012 read/write cycles, or a
million times more write cycles than EEPROM.
These capabilities make the FM24C64 ideal for
nonvolatile memory applications requiring frequent
or rapid writes. Examples range from data collection
where the number of write cycles may be critical, to
demanding industrial controls where the long write
time of EEPROM can cause data loss. The
combination of features allows more frequent data
writes with less overhead for the system.
The FM24C64 provides substantial benefits to users
of serial EEPROM, yet these benefits are available in
a hardware drop-in replacement. The FM24C64 is
available in an industry standard 8-pin SOIC package
using a two-wire protocol. The specifications are
guaranteed over an industrial temperature range of
-40°C to +85°C.