The FM24CL16 is a 16-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or FRAM is
nonvolatile and performs reads and writes like a
RAM. It provides reliable data retention for 45 years
while eliminating the complexities, overhead, and
system level reliability problems caused by EEPROM
and other nonvolatile memories.
Unlike serial EEPROMs, the FM24CL16 performs
write operations at bus speed. No write delays are
incurred. The next bus cycle may commence
immediately without the need for data polling. In
addition, the product offers unlimited write
endurance, orders of magnitude more endurance than
EEPROM. Also, FRAM exhibits much lower power
during writes than EEPROM since write operations
do not require an internally elevated power supply
voltage for write circuits.
These capabilities make the FM24CL16 ideal for
nonvolatile memory applications requiring frequent
or rapid writes. Examples range from data collection
where the number of write cycles may be critical, to
demanding industrial controls where a long write time
can cause data loss. The combination of features
allows the system to write data more frequently, with
less system overhead.
The FM24CL16 is available in an industry standard
8-pin SOIC and uses a two-wire protocol. The
specifications are guaranteed over the industrial
temperature range from -40°C to +85°C.