The FM18L08 is a 256-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or FRAM is
nonvolatile and reads and writes like a RAM. It
provides data retention for 45 years while eliminating
the reliability concerns, functional disadvantages and
system design complexities of battery-backed SRAM
(BBSRAM). Fast write timing and high write
endurance make FRAM superior to other types of
nonvolatile memory.
In-system operation of the FM18L08 is very similar
to other RAM based devices. Read cycle and write
cycle times are equal. The FRAM memory, however,
is nonvolatile due to its unique ferroelectric memory
process. Unlike BBSRAM, the FM18L08 is a truly
monolithic nonvolatile memory. It provides the same
functional benefits of a fast write without the
disadvantages associated with modules and batteries
or hybrid memory solutions.
These capabilities make the FM18L08 ideal for
nonvolatile memory applications requiring frequent
or rapid writes in a bytewide environment. The
availability of a surface-mount package improves the
manufacturability of new designs, while the DIP
package facilitates simple design retrofits. Device
specifications are guaranteed over a temperature
range of -40°C to +85°C.